Philips bfg25aw x free download

File name bfg25aw_x.pdf

DATA SHEET dbook, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors Product specification 1998 Sep 23 Supersedes data of August 1995 NXP Semiconductors Product specification BFG25AW; NPN 5 GHz wideband transistors BFG25AW/X FEATURES PINNING Low current consumption PIN DESCRIPTION lfpage 4 3 (100 A to 1 mA) BFG25AW Low noise figure 1 collector Gold metallization ensures excellent reliability. 2 base 1 2 3 emitter APPLICATIONS 4 emitter Top view MBK523 Wideband applications in UHF low BFG25AW/X Fig.1 SOT343N. power amplifiers, such as pocket 1 collector telephones and paging systems. 2 emitter 3 base MARKING DESCRIPTION 4 emitter TYPE NUMBER CODE NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N BFG25AW N6 plastic package. BFG25AW/X V1 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 8 V VCEO collector-emitter voltage open base 5 V IC collector current (DC) 6.5 mA Ptot total power dissipation Ts 85 C 500 mW hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200 Cre feedback capacitance IC = 0; VCE = 1 V; f = 1